C945 CR

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors C945 SOT-23 TRANSISTOR (NPN) FEATURE z z z 1. BASE Excellent hFE Linearity Low noise Complementary to A733 2. EMITTER 3. COLLECTOR MARKING:CR· MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current 150 mA PC Collector Power Dissipation 200 mW RΘJA Thermal Resistance From Junction To Ambient 625 ℃/W TJ,Tstg Operation Junction and Storage Temperature Range -55～+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA , IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA, IC=0 5 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 uA Collector cut-off current ICER VCE=55V,R=10MΩ 0.1 uA Emitter cut-off current IEBO VEB=5V , IC=0 0.1 uA hFE(1) VCE=6 V , IC=1mA 130 hFE(2) VCE=6 V , IC=0.1mA 40 DC current gain 400 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB=10mA 1 V Transition frequency fT Collector output capacitance Cob Noise figure NF VCE=6V,IC=10mA,f =30 MHz 150 MHz VCB=10V,IE=0,f=1MHZ VCE=6V,IC=0.1mA Rg=10kΩ,f=1kMHZ 4 3.0 pF 10 dB CLASSIFICATION OF hFE(1) Rank L H Range 130-200 200-400 www.jscj-elec.com 1 Rev. - 2.0 Typical Characteristics hFE —— Static Characteristic 1000 12 IC 27uA hFE (mA) 10 Ta=100℃ COMMON EMITTER Ta=25℃ 30uA DC CURRENT GAIN COLLECTOR CURRENT Ta=25℃ 300 24uA 8 21uA 18uA 6 IC 15uA 12uA 4 100 9uA 30 6uA 2 VCE=6V IB=3uA 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VCEsat —— VCE 10 0.7 12 IC VBEsat —— BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) IC 100 150 (mA) IC 1000 100 Ta=100℃ Ta=25℃ 30 1 10 3 COLLECTOR CURRENT Cob / Cib 15 100 30 —— IC 600 Ta=100℃ 400 0.3 1 10 3 COLLECTOR CURRENT (mA) VCB / VEB PC 0.25 COLLECTOR POWER DISSIPATION PC (W) (pF) Ta=25℃ 10 Cib 5 Cob —— 100 150 30 IC (mA) Ta 0.20 0.15 0.10 0.05 0.00 0.3 1 REVERSE BIAS VOLTAGE www.jscj-elec.com Ta=25℃ 200 0.1 150 f=1MHz IE=0 /IC=0 0 0.1 800 β=10 β=10 10 C 30 10 COLLECTOR CURRENT 300 CAPACITANCE 3 1 (V) 10 3 V 0 (V) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃ ) Rev. - 2.0 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 3 Rev. - 2.0 SOT-23 Tape and Reel www.jscj-elec.com 4 Rev. - 2.0